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Factors affecting film formation Chapter 1

Article source:Zhenhua vacuum
Read:10
Published:24-01-05

(1) Sputtering gas. The sputtering gas should have the characteristics of high sputtering yield, inert to the target material, cheap, easy to get high purity and other characteristics. Generally speaking, argon is the more ideal sputtering gas.

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(2) Sputtering voltage and substrate voltage. These two parameters have an important impact on the characteristics of the film, sputtering voltage not only affects the deposition rate, but also seriously affect the structure of the deposited film. Substrate potential directly affects the electron or ion flow of human injection. If the substrate is grounded, it is bombarded by equivalent electrons; if the substrate is suspended, it is in the glow discharge area to obtain a slightly negative potential relative to the ground of the suspension potential V1, and the potential of the plasma around the substrate V2 to be higher than the substrate potential, which will give rise to a certain degree of bombardment of electrons and positive ions, resulting in changes in the film thickness, composition, and other characteristics: if the substrate purposefully applied bias voltage, so that it is in accordance with the polarity of the electrical acceptance of electrons or ions, not only can purify the substrate and enhance the adhesion of the film, but also change the structure of the film. In the radio frequency sputtering coating, the preparation of conductor membrane plus DC bias: the preparation of dielectric membrane plus tuning bias.

(3) Substrate temperature. Substrate temperature has a greater impact on the internal stress of the film, which is due to the temperature directly affects the activity of the deposited atoms on the substrate, thus determining the composition of the film, structure, average grain size, crystal orientation and incompleteness.

–This article is released by vacuum coating machine manufacturer Guangdong Zhenhua


Post time: Jan-05-2024