Tilmaamaha ugu muhiimsan ee habka uumiga faakuumka ee loogu talagalay kaydinta filimada waa heerka kaydinta sare.Muuqaalka ugu muhiimsan ee habka xajinta ayaa ah noocyada kala duwan ee qalabka filimka ee la heli karo iyo isku-duubnaanta wanaagsan ee lakabka filimka, laakiin heerka dhigaalka ayaa hooseeya.Daahan ion waa hab isku daraya labadan habraac.
Ion mabda'a daahan iyo xaaladaha formation film
Mabda'a shaqada ee daahan ion ayaa lagu muujiyay sawirka.Qolka faakuumka waxaa lagu shubaa cadaadis ka hooseeya 10-4 Pa, ka dibna waxaa lagu buuxiyaa gaas aan shaqayn (tusaale argon) cadaadiska 0.1 ~ 1 Pa. Cadaadis hoose oo gaaska dhaldhalaalka dheecaanka balasmaha ayaa la aasaasay inta u dhaxaysa substrate-ka iyo qulqulka.Iions gaaska aan firfircooneyn ayaa lagu dardargeliyaa beerta korantada waxayna duqeeyaan dusha sare ee substrate-ka, sidaas darteed nadiifinta dusha sare ee shaqada.Ka dib marka nidaamkan nadiifinta la dhammeeyo, habka daahku wuxuu ku bilaabmaa uumiga walxaha lagu dahaadhay qashinka.Qaybaha uumiga uumiga ah ayaa gala aagga balasmaha waxayna isku dhacaan ion togan inert inert iyo electrons, iyo qaar ka mid ah qaybaha uumiga ayaa kala go'ay oo duqeeya shaqada iyo dusha dahaarka ee hoos u dhaca dardargelinta beerta korontada.Geedi socodka ion ion, ma jiraan oo kaliya dhigista laakiin sidoo kale ku tufaax of ion togan on substrate, sidaas filimka khafiif ah la samayn karaa oo kaliya marka saamaynta dhigidda ka weyn yahay saamaynta sputtering.
Habka dahaarka ion, kaas oo substrate had iyo jeer lagu duqeeyo ions tamar sare, waa mid aad u nadiif ah oo leh tiro faa'iidooyin ah marka la barbar dhigo sputtering iyo uumiga.
(1) adhesion xoog leh, lakabka daahan si fudud uma fujiyo.
(a) Habka daahan ion, tiro badan oo ah qaybo tamarta sare leh oo ay dhaliso dareeraha dhalaalka ah ayaa loo isticmaalaa si loo soo saaro saamaynta cathodic ee dusha sare ee substrate-ka, xoqidda iyo nadiifinta gaaska iyo saliidda lagu dhajiyay dusha sare ee substrate-ka. substrate si loo nadiifiyo dusha substrate ilaa habka daahan oo dhan la dhammeeyo.
(b) Marxaladda hore ee dahaarka, sputtering iyo dhigaalka wada noolaanshaha, kaas oo samayn kara lakabka kala-guurka ah ee qaybaha isdhexgalka ee saldhigga filimka ama isku dhafka walxaha filimka iyo walxaha saldhigga ah, oo loo yaqaan "lakabka faafinta-faafinta", kaas oo si wax ku ool ah u wanaajin kara waxqabadka adhesion ee filimka.
(2) Guryo duuban oo wanaagsan.Mid ka mid ah sababtu waa in atomyada walxaha dahaarka ah ay ionized ka hooseeyaan cadaadis sare oo ay isku dhacaan unugyallo gaas dhowr jeer inta lagu guda jiro habka loo gaaro substrate-ka, si ay ion walxaha dahaarka loo kala firdhiyo agagaarka substrate-ka.Intaa waxaa dheer, atomyada walxaha dahaarka ah ee ionized ayaa lagu dhejiyaa dusha sare ee substrate ee hoos yimaada ficilka korontada, sidaas darteed dhammaan substrate-ka waxaa lagu dhejiyaa filim khafiif ah, laakiin daboolka uumiga ma gaari karo saameyntan.
(3) Tayada sare ee dahaarka waxaa sabab u ah sputing of condensates ay keento bambooyin joogto ah ee filimka la dhigay oo leh ions togan, taas oo hagaajinaysa cufnaanta lakabka daahan.
(4) Xulasho balaadhan oo ah alaabta daahan iyo substrates ayaa lagu dahaadhay karaa alaabta macdan ama kuwa aan biraha ahayn.
(5) Marka la barbar dhigo kaydinta uumiga kiimikada (CVD), waxay leedahay heerkul hoose oo hoose, oo caadi ahaan ka hooseeya 500 ° C, laakiin xooggeeda adhesion waxay si buuxda ula mid tahay filimada kaydinta uumiga kiimikada.
(6) Heerarka dhigaalka sare, samaynta filimada degdega ah, oo dahaadhi kara dhumucda filimada tobanaan nanometer ilaa microns.
Khasaarooyinka dahaarka ion waa: dhumucda filimka si sax ah looma xakameyn karo;xoojinta cilladaha ayaa sarreeya marka loo baahan yahay dahaarka wanaagsan;iyo gaasaska ayaa geli doona dusha sare inta lagu jiro daahan, taas oo bedeli doonta sifooyinka dusha sare.Xaaladaha qaarkood, godadka iyo nukleiyada (in ka yar 1 nm) ayaa sidoo kale la sameeyay.
Marka loo eego heerka dhigista, dahaarka ion wuxuu la mid yahay habka uumiga.Sida tayada filimka, filimada ay soo saaraan daahan ion waxay ku dhow yihiin ama ka fiican yihiin kuwa lagu diyaariyo sputtering.
Waqtiga boostada: Nov-08-2022