Iimpawu eziqhelekileyo zetekhnoloji yokwaleka kwe-ion yokukhupha ukukhanya

1. I-bias yomsebenzi iphantsi

Ngenxa yokongezwa kwesixhobo sokunyusa izinga le-ionization, ukuxinana kwangoku okukhuphayo kwanda, kwaye i-voltage ye-bias iyancitshiswa ibe yi-0.5 ~ 1kV.

I-backsputtering ebangelwa ngokugqithisileyo kwebhobho ye-ion ezinamandla amakhulu kunye nesiphumo somonakalo kumphezulu we-workpiece iyancipha.

2. Ukunyuka koxinzelelo lweplasma

Amanyathelo ahlukeneyo okukhuthaza ukungqubana kwe-ionization yongezwa, kwaye izinga le-ionization yensimbi liye landa ukusuka kwi-3% ukuya ngaphezu kwe-15%.Ubuninzi bee-ion ze-chin kunye ne-athomu engathathi hlangothi yamandla aphezulu, i-nitrogen ion, i-athomu ephezulu yamandla asebenzayo kunye namaqela asebenzayo kwigumbi lokugquma iyanda, ehambelana nokusabela kwi-compounds.Itekhnoloji yokugquma eyongeziweyo engaphezulu eyongeziweyo yokukhutshwa kwe-ion ikwazile ukufumana umaleko wefilimu eqinile ye-TN ngokufaka impendulo kuxinzelelo oluphezulu lweplasma, kodwa ngenxa yokuba zezohlobo lokukhutshwa okukhanyayo, ukuxinana kwangoku akuphezulu ngokwaneleyo (inqanaba le-mA/cm2 lisephezulu ngokwaneleyo. ), kunye noxinaniso lweplasma ngokubanzi aluphezulu ngokwaneleyo, kwaye inkqubo yokuphendula i-deposition i-compound coating inzima.

3. Uluhlu lokugquma lomthombo wokuphuphuma komphunga luncinci

Iitekhnoloji ezahlukeneyo zokugquma kwe-ion eziphuculweyo zisebenzisa imithombo yokuphuphuma komqadi we-elektroni, kunye ne-gantu njengomthombo wokuvela komphunga, othintelwe kwithuba elithile elingaphezulu kwe-gantu yokubekwa kokusabela, ngoko ke imveliso iphantsi, inkqubo inzima, kwaye kunzima ukwenza ishishini.

4. Umpu we-elektroniki womsebenzi woxinzelelo oluphezulu

I-voltage ye-electron gun yi-6 ~ 30kV, kwaye i-voltage ye-bias ye-workpiece yi-0.5 ~ 3kV, eyeyomsebenzi ophezulu we-voltage kwaye ineengozi ezithile zokhuseleko.

——Eli nqaku likhutshwe nguGuangdong Zhenhua Technology, aumenzi woomatshini bokwaleka optical.