Xa ukubekwa kwe-athomu ye-membrane kuqala, i-ion bombardment ineziphumo ezilandelayo kwi-membrane / substrate interface.
(1) Ukuxubana ngokwasemzimbeni. Ngenxa yenaliti ye-ion ene-eneji ephezulu, ukuchaphaza kweeathom ezidiphozithiweyo kunye nenaliti yokubuyisela i-athomu yomhlaba kunye ne-cascade collision phenomenon, iya kubangela indawo ekufutshane nomphezulu we-membrane / ujongano lwesiseko se-substrate element kunye ne-membrane ye-non-diffusion edibanisayo, le mpembelelo yokuxuba iya kuba luncedo ekubunjweni kwe-membrane, i-interface ye-membrane, i-interface ye-membrane. phakathi kwenwebu/ujongano lwesiseko, ukuya kuthi ga kwiimicrons ezimbalwa. Iimicrometer ezimbalwa ezityebileyo, apho izigaba ezitsha zinokuvela. Oku kulungele kakhulu ukuphucula amandla okunamathela kwi-membrane / ujongano lwesiseko.
(2) Ukusasazwa okuphuculweyo. Ugxininiso oluphezulu lwesiphako kwindawo esondeleyo kunye nobushushu obuphezulu bonyusa izinga lokusasazwa. Kuba umphezulu uyisiphene, ii-ion ezincinci zinotyekelo lokuphambuka umphezulu, kwaye i-ion bombardment inesiphumo sokuphucula ngakumbi ukuphambuka komphezulu kunye nokuphucula ukusasazwa kwe-athomu ediphozithiweyo kunye ne-substrate.
(3) Ukuphuculwa kwendlela ye-nucleation. Iimpawu ze-athomu ezijikisiweyo kumphezulu we-substrate zichongwa ngokudibana kwayo komphezulu kunye neempawu zayo zokufuduka kumphezulu. Ukuba akukho ukusebenzisana okuqinileyo phakathi kwe-athomu ecuthiweyo kunye nomphezulu we-substrate, i-athomu iya kusasazeka phezu komhlaba ide ibe yi-nucleate kwindawo ephezulu yamandla okanye ingqubane nezinye ii-athom ezisasazayo. Le ndlela ye-nucleation ibizwa ngokuba yi-non-reactive nucleation. Nangona i-original ikwimeko ye-non-reactive nucleation mode, nge-ion bombardment ye-substrate surface inokuvelisa iziphene ezingaphezulu, ukwandisa ubuninzi be-nucleation, okulungele ngakumbi ukubunjwa kwe-diffusion - i-reactive nucleation mode.
(4) Ukususwa okukhethiweyo kweeathom ezibotshwe ngokukhululekileyo. Ukuchaphaza kwee-athom zomphezulu kumiselwa bubume bendawo yokudibanisa, kwaye ibhombu ye-ion yomphezulu kunokwenzeka ukuba ikhuphe iiathom ezibotshelelwe ngokukhululekileyo. Esi siphumo sibonakala ngakumbi ekubunjweni kwe-diffusion-reactive interfaces.
(5) Ukuphuculwa kokugquma komphezulu kunye nokwandiswa kweplating bypass. Ngenxa yoxinzelelo oluphezulu lwerhasi yokusebenza kwe-ion plating, iiathom ezikhutshiweyo okanye ezichithekileyo ziphantsi kongquzulwano neeathom zerhasi ukukhulisa ukusasazeka, okukhokelela kwiipropathi ezilungileyo zokusonga.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: Dec-09-2023