Ion beam sputtering ukutyabeka kunye ion beam etching

1. Ion beam beam sputtering ukutyabeka

Umphezulu wezinto eziphathekayo uhlaselwe ngumqa we-ion ophakathi, kwaye amandla e-ion awangeni kwi-crystal lattice yezinto eziphathekayo, kodwa adlulisele amandla kwii-athom ezijoliswe kuyo, ezibangela ukuba zitshise zisuka kumphezulu wezinto eziphathekayo, kwaye emva koko zenze ifilimu ebhityileyo ngokubeka kwi-workpiece. Ngenxa ye-sputtering eveliswa ngumqa we-ion, amandla e-athomu yefilimu echithekileyo iphezulu kakhulu, kwaye into ekujoliswe kuyo iqhutywe nge-ion beam kwi-vacuum ephezulu, ukucoceka komgangatho wefilimu kuphezulu, kwaye iifilimu ezikumgangatho ophezulu zingafakwa, ngelixa uzinzo lwe-ion beam film layer luphuculwe, olunokuthi lufezekise injongo yefilimu kunye nokuphucula ifilimu. Injongo ye-ion beam sputtering kukwenza izinto ezintsha zefilimu ezibhityileyo.

2. Ukukrolwa kwe-ion beam

Ion umqadi etching kwakhona medium-eneji ion umqadi bombardment kumphezulu wezinto ukuvelisa sputtering, isiphumo etching kwi substrate, isixhobo semiconductor, izixhobo optoelectronic kunye nezinye iindawo imveliso yemizobo core ubuchwepheshe. Itekhnoloji yokulungiselela iitshiphu kwiisekethe ezidibeneyo ze-semiconductor ibandakanya ukulungiswa kwezigidi ze-transistors kwi-single-crystal silicon wafer kunye nobubanzi be-Φ12in (Φ304.8mm). I-transistor nganye yakhiwe kumacandelo amaninzi eefilimu ezibhityileyo ezinemisebenzi eyahlukeneyo, ebandakanya umaleko osebenzayo, umaleko wokugquma, umaleko wokuzihlukanisa, kunye nomgangatho wokuqhuba. Uluhlu ngalunye olusebenzayo lunomzekelo walo, ngoko ke emva kokuba uluhlu ngalunye lwefilimu esebenzayo lufakwe, iindawo ezingenamsebenzi kufuneka zifakwe kunye ne-ion beam, zishiya izinto eziluncedo zefilimu. Kule mihla, ububanzi bocingo lwe-chip bufikelele kwi-7mm, kwaye i-ion beam etching iyimfuneko ukulungiselela ipateni enhle kangaka. Ion beam etching yindlela eyomileyo yokubhala enokuchaneka okuphezulu xa kuthelekiswa nendlela emanzi esetyenzisiweyo ekuqaleni.

Itekhnoloji yokufaka umqadi we-Ion kunye ne-ion engasebenziyo ye-beam etching kunye ne-ion esebenzayo ye-ion etching eneentlobo ezimbini. Eyangaphambili ene-argon ion beam etching, yeyokusabela komzimba; eyokugqibela ene-fluorine ion beam beam, umqa we-ion we-fluorine ukongeza kumandla aphezulu ukuvelisa indima ye-tramp, umqa we-ion we-fluorine unokufakwa kunye ne-SiO₂, Si₃I-N4, i-GaAs, i-W kunye nezinye iifilimu ezibhityileyo zine-reaction yekhemikhali, yinkqubo yokusabela ngokomzimba, kodwa kunye nenkqubo yokusabela kweekhemikhali yeteknoloji ye-ion beam etching, isantya sokurhweba siyakhawuleza. Iigesi ezonakalisayo zokusabela zi-CF₄, C₂F₆,CCl4,BCl₃, njl., iireactants ezenziweyo ze-SiF₄, SiCl₄, GCl₃;, kunye neWF₆ iigesi ezidliwayo ziyatsalwa. Itekhnoloji ye-Ion beam etching yitekhnoloji ephambili yokuvelisa iimveliso ezikumgangatho ophezulu.

–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua