No.1 Umgaqo wamandla aphezulu epulsed magnetron sputtering
Amandla aphezulu epulsed magnetron sputtering technique isebenzisa amandla aphezulu epulse (2-3 orders of manitude above common magnetron sputtering) kunye nomjikelo ophantsi womsebenzi wepulse (0.5% -10%) ukuphumeza amazinga aphezulu okuqhawula intsimbi (>50%), leyo Ithatyathwe kwiimpawu zemagnetron sputtering, njengoko kubonisiwe kwiPic 1, apho incopho ekujoliswe kuyo ngoku ingxinano I ilingana namandla ombane wokukhupha u-U, I = kUn (n yinto ehlala ihambelana nesakhiwo secathode, indawo yemagnethi. kunye nezinto).Kwimixinano yamandla aphantsi (i-voltage ephantsi) ixabiso le-n lidla ngokuba kuluhlu lwe-5 ukuya kwi-15;ngokunyuka kwamandla ombane okukhutshwayo, ukuxinana kwangoku kunye nokuxinana kwamandla kwanda ngokukhawuleza, kwaye kwi-voltage ephezulu ixabiso le-n liba yi-1 ngenxa yokulahleka kokuvalelwa kwemagnethi.Ukuba kuxinzelelo lwamandla aphantsi, ukukhutshwa kwegesi kuchongwa yi-ion yegesi ekwimo yesiqhelo yokukhupha i-pulsed;ukuba kuxinaniso lwamandla aphezulu, umlinganiselo weiyoni zetsimbi kwiplasma uyenyuka kwaye ezinye izinto ziyatshintsha, ekwimowudi yokuziphalaza, oko kukuthi, iplasma igcinwa yi ionization yamasuntswana angathathi hlangothi afafaziweyo kunye neeyoni zentsimbi yesibini, kunye neathomu yegesi engasebenziyo. ezifana ne-Ar zisetyenziselwa kuphela ukutshisa i-plasma, emva koko amasuntswana esinyithi athathiweyo afakwe i-ionized kufuphi nethagethi kwaye akhawulezise umva ukuze abhobhoze ithagethi ephothiweyo phantsi kwesenzo semimandla yamagnetic kunye nombane ukugcina ukukhutshwa okuphezulu kwangoku, kwaye iplasma iphezulu kakhulu. amasuntswana ensimbi ionized.Ngenxa yenkqubo yokutshiza isiphumo sokufudumeza kwithagethi, ukuze kuqinisekiswe ukusebenza ngokuzinzileyo kokujoliswe kuko kwizicelo zemizi-mveliso, uxinaniso lwamandla olusetyenziswa ngokuthe ngqo kwithagethi alunakuba lukhulu kakhulu, ngokuqhelekileyo ukupholisa amanzi ngokuthe ngqo kunye nokujoliswa kwesixhobo sokuqhuba i-thermal. kufuneka ibe kwimeko ye-25 W / cm2 ngezantsi, ukupholisa kwamanzi ngokungathanga ngqo, imathiriyeli ekujoliswe kuyo ekuqhubeni kwe-thermal ihlwempuzekileyo, imathiriyeli ekujoliswe kuyo ebangelwa kukuqhekeka ngenxa yoxinzelelo lwe-thermal okanye imathiriyeli ekujoliswe kuyo iqulethe amacandelo e-alloy aphantsi kunye nezinye iimeko zokuxinana kwamandla kunokuba 2 ~ 15 W / cm2 ngaphantsi, kude ngaphantsi kweemfuno zoxinano lwamandla aphezulu.Ingxaki yokutshisa okujoliswe kuko ingasonjululwa ngokusebenzisa iipulse zamandla ezimxinwa kakhulu.UAnders uchaza amandla aphezulu epulsed magnetron sputtering njengohlobo lokugafaza kwepulsed apho amandla aphezulu oxinaniso ludlula umndilili woxinzelelo lwamandla nge-2 ukuya kwi-3 yemiyalelo yobukhulu, kwaye i-ion ekujoliswe kuyo yongamela inkqubo yokutshiza, kwaye ekujoliswe kuko okugabhayo okujoliswe kuko kukudityaniswa kakhulu kweeathom. .
No.2 Iimpawu zamandla aphezulu epulsed magnetron sputtering coating deposition
Amandla aphezulu e-pulsed magnetron sputtering anokuvelisa i-plasma enezinga eliphezulu lokuqhawula kunye namandla aphezulu e-ion, kwaye angafaka uxinzelelo lwe-bias ukukhawulezisa i-ion ehlawulisiweyo, kunye nenkqubo yokubeka i-coating ibhobhozwa ngamasuntswana anamandla aphezulu, obuchwephesha obuqhelekileyo be-IPVD.Amandla e-ion kunye nokusabalalisa kunempembelelo ebaluleke kakhulu kumgangatho wokugquma kunye nokusebenza.
Malunga ne-IPVD, esekwe kwimodeli edumileyo yengingqi yesakhiwo saseThorton, uAnders ucebise imodeli yommandla wolwakhiwo obandakanya ukubekwa kweplasma kunye ne-ion etching, yandisa ubudlelwane phakathi kwesakhiwo sokugquma kunye nobushushu kunye noxinzelelo lomoya kwimodeli yengingqi yeThorton kubudlelwane phakathi kolwakhiwo lokutyabeka, Iqondo lobushushu kunye namandla e-ion, njengoko kubonisiwe kwiPic 2. Kwimeko yokwalekwa kwe-ion yokubeka amandla aphantsi, ulwakhiwo lokwaleka luhambelana nemodeli yezowuni yesakhiwo seThorton.Ngokunyuka kweqondo lokushisa lokubeka, utshintsho olusuka kwingingqi ye-1 (i-porous fiber crystals) ukuya kwi-T (i-dense fiber crystals), i-2 (i-columnar crystals) kunye nommandla we-3 (ummandla we-recrystallization);ngokunyuka kwamandla e-ion yokubeka, ubushushu benguqu ukusuka kwingingqi 1 ukuya kwingingqi T, ummandla 2 kunye nommandla 3 uyancipha.I-crystals ye-fiber crystals ephezulu kunye ne-columnar crystals inokulungiswa kwiqondo lokushisa eliphantsi.Xa amandla eeion ezidiphozithiweyo enyuka ukuya kumyalelo we-1-10 eV, ukuqhushumba kwebhombu kunye nokubotshwa kweeyoni kwindawo yokwaleka ediphozithiweyo kuyaphuculwa kwaye ubukhulu bezinto zokwaleka buyanda.
No.3 Ukulungiswa koqweqwe olunzima lokugquma ngamandla aphezulu epulsed magnetron sputtering technology
I-coating elungiselelwe ngamandla aphezulu e-pulsed magnetron sputtering teknoloji i-denser, eneempawu ezingcono zoomatshini kunye nokuzinza okuphezulu kobushushu.Njengoko kubonisiwe kwi-Pic 3, i-magnetron eqhelekileyo i-sputtered i-TiAlN yokugqoka i-columnar crystal structure kunye nobunzima be-30 GPa kunye ne-Young's modulus ye-460 GPa;i-HIPIMS-TiAlN i-coating yi-34 ye-GPa yobunzima ngelixa i-modulus ye-Young i-377 GPa;umlinganiselo phakathi kobulukhuni kunye nemodyuli yoNcinci ngumlinganiselo wokuqina kwengubo.Ubulukhuni obuphezulu kunye nemodyuli encinci ye-Young's modulus ithetha ukuqina okungcono.Ukufakwa kwe-HIPIMS-TiAlN kunozinzo olungcono lobushushu obuphezulu, kunye nesigaba se-AlN esine-hexagonal sigqithise kwi-coating ye-TiAlN eqhelekileyo emva konyango oluphezulu lwe-annealing kwi-1,000 °C kwi-4 h.Ubunzima bengubo buyancipha kwiqondo lokushisa eliphezulu, ngelixa i-HIPIMS-TiAlN yokugqoka ihlala ingatshintshi emva kokunyangwa kobushushu kwiqondo lokushisa elifanayo kunye nexesha.I-HIPIMS-TiAlN yokwambathisa nayo inobushushu obuphezulu bokuqala kobushushu obuphezulu be-oxidation kunokwaleka okuqhelekileyo.Ngoko ke, i-HIPIMS-TiAlN yokugqoka ibonisa ukusebenza okungcono kakhulu kwizixhobo zokusika ngesantya esiphezulu kunezinye izixhobo ezigqunywe yinkqubo ye-PVD.
Ixesha lokuposa: Nov-08-2022