1. Iimpawu zokugquma kwe-sputter
Xa kuthelekiswa nokwaleka okufunxayo okufunxayo okuqhelekileyo, ukugquma okufunxayo kunezi mpawu zilandelayo:
(1) Nayiphi na into inokuchaphazwa, ngakumbi indawo yokunyibilika ephezulu, izinto zoxinzelelo lomphunga ophantsi kunye neekhompawundi.Ngethuba nje iqinile, ingaba yintsimbi, i-semiconductor, i-insulator, i-compound kunye nomxube, njl., ingaba ibhloko, i-granular material ingasetyenziswa njengento ekujoliswe kuyo.Kuba ukubola okuncinci kunye nokwahlulwa kwenzeka xa kufafazwa izinto ezigqumayo kunye neealloyi ezinjengeeoxides, zinokusetyenziselwa ukulungisa iifilimu ezicekethekileyo kunye neefilim ezixutywe nengxubevange enamalungu afanayo nalawo ezinto ekujoliswe kuzo, kunye neefilim ezigqithisayo ezinemixholo entsonkothileyo. indlela ye-sputtering esebenzayo ingasetyenziselwa ukuvelisa iifilimu zeekhompawundi ezihluke ngokupheleleyo kwizinto ezijoliswe kuzo, ezifana ne-oxides, i-nitrides, i-carbides kunye ne-silicides.
(2) Ukubambelela kakuhle phakathi kwefilimu ephothiweyo kunye ne-substrate.Ekubeni amandla e-athom e-sputtered yi-1-2 yee-odolo zobukhulu obuphezulu kune-athom e-evaporated, ukuguqulwa kwamandla amasuntswana anamandla aphezulu afakwe kwi-substrate kuvelisa amandla aphezulu okushisa, okwandisa ukunamathela kwee-athom ezichithakeleyo kwi-substrate.Inxalenye ye-athomu ephezulu ene-energy sputtered iya kujojozwa kwii-degrees ezahlukeneyo, yenze into ebizwa ngokuba yi-pseudo-diffusion layer kwi-substrate apho ii-athomu ezihlanjululweyo kunye nee-athomu ze-substrate "miscible" kunye nomnye.Ukongezelela, ngexesha lokuqhuma kwebhobho ye-sputtering particles, i-substrate ihlala ihlanjululwa kwaye isebenze kwindawo ye-plasma, esusa i-athomu edibeneyo edibeneyo, ihlambulule kwaye isebenze i-substrate surface.Ngenxa yoko, ukunamathela komgca wefilimu e-sputtered kwi-substrate kuphuculwe kakhulu.
(3) Ukuxinana okuphezulu kokugquma kwe-sputter, imingxunya emincinci, kunye nokucoceka okuphezulu komgangatho wefilimu ngenxa yokuba akukho ngcoliseko ye-crucible, engenakuthintelwa ekufakweni komphunga ngexesha lenkqubo yokugquma kwe-sputter.
(4) Ukulawulwa kakuhle kunye nokuphindaphinda kobunzima befilimu.Ekubeni ukukhutshwa kwangoku kunye nokujoliswe kuko kwangoku kunokulawulwa ngokwahlukileyo ngexesha lokugquma kwe-sputter, ubukhulu befilimu bunokulawulwa ngokulawula umlinganiselo ojoliswe kuwo, ngoko ke, ukulawulwa kobunzima befilimu kunye nokuphindaphinda kobunzima befilimu ngokutshiza okuphindaphindiweyo kwe-sputter coating kulungile. , kwaye ifilimu yobunzima obunqunywe kwangaphambili inokugqunywa ngokufanelekileyo.Ukongeza, ukugquma kwe-sputter kunokufumana ubukhulu befilimu efanayo kwindawo enkulu.Nangona kunjalo, kwitekhnoloji yokugquma i-sputter ngokubanzi (ikakhulukazi i-dipole sputtering), isixhobo sinobunzima kwaye sifuna isixhobo soxinzelelo oluphezulu;isantya sokubunjwa kwefilimu ye-sputter deposition iphantsi, i-vacuum evaporation deposition rate yi-0.1 ~ 5nm / min, ngelixa i-sputtering rate yi-0.01 ~ 0.5nm / min;Ubushushu be-substrate buphezulu kwaye busesichengeni kwirhasi yokungcola, njl.Ngaphezu koko, kwiminyaka yakutshanje, iindlela ezintsha zokugquma kwe-sputter ziyaphandwa-ngokusekwe kwiplani ye-magnetron sputtering-ukunciphisa uxinzelelo lomoya wokutshiza kude kube yi-zero-pressure sputtering apho uxinzelelo lwegesi yokungena ngexesha lokutshiza luya kuba ngu-zero.
Ixesha lokuposa: Nov-08-2022