Ngokubanzi iimpendulo ze-CVD zixhomekeke kumaqondo obushushu aphezulu, yiloo nto ebizwa ngokuba yikhemikhali echulumancisiweyo yokubeka umphunga (TCVD).Ngokuqhelekileyo isebenzisa ii-precursors ze-inorganic kwaye yenziwa kudonga olushushu kunye ne-reactors eludongeni olubandayo.Iindlela zayo ezifudumalayo ziquka ukufudumeza kwerediyo (RF), ukufudumeza kwe-infrared radiation, ukufudumeza ukuxhathisa, njl.
Udonga olushushu lwekhemikhali yokubekwa komphunga
Ngokwenyani, udonga olushushu lwekhemikhali yokufaka umphunga kwireyitha liziko le-thermostatic, elidla ngokufudunyezwa ngezinto ezixhathisayo, ukulungiselela imveliso ngamaxesha athile.Umzobo wodonga olushushu lwekhemikhali yokubeka umphunga kwindawo yokuvelisa isixhobo setshiphu siboniswe ngolu hlobo lulandelayo.Oku kufakwa komphunga wekhemikhali kudonga olushushu kunokwambatha iTiN, iTiC, iTiCN kunye nezinye iifilimu ezibhityileyo.I-reactor inokuyilwa ukuba ibe nkulu ngokwaneleyo emva koko ibambe inani elikhulu lamalungu, kwaye iimeko zinokulawulwa ngokuchanekileyo kakhulu ngokubekwa.I-Pic 1 ibonisa isixhobo se-epitaxial layer ye-silicon doping yemveliso yesixhobo se-semiconductor.I-substrate kwisithando somlilo ibekwe kwicala elithe nkqo ukuze kuncitshiswe ukungcoliseka kwendawo yokubeka ngamasuntswana, kwaye yandise kakhulu ukulayishwa kwemveliso.Iireactors eludongeni olushushu lwemveliso ye-semiconductor zihlala ziqhutywa kuxinzelelo oluphantsi.
Ixesha lokuposa: Nov-08-2022