Ukukhula kwe-Epitaxial, okuvame ukubizwa nangokuthi i-epitaxy, kungenye yezinqubo ezibaluleke kakhulu ekwenziweni kwezinto zokwakha kanye namadivayisi we-semiconductor. Okubizwa ngokuthi ukukhula kwe-epitaxial kusezimweni ezithile ku-single crystal substrate ekukhuleni kongqimba lwenqubo yefilimu yomkhiqizo owodwa, ukukhula kwefilimu ye-crystal eyodwa kubizwa nge-epitaxial layer epitaxial technology ekuqaleni kwawo-1960 ocwaningweni lwefilimu ye-silicon eyodwa-crystal encane ngesisekelo sokuvela kokuthuthukiswa cishe kwekhulu leminyaka manje, abantu baye bakwazi ukuqaphela ifilimu ehlukahlukene ngaphansi kwezimo ezithile ze-semicondu. Ubuchwepheshe be-Epitaxial buye baxazulula izinkinga eziningi ezingxenyeni ze-semiconductor discrete kanye namasekethe ahlanganisiwe, okwenza ngcono kakhulu ukusebenza kwedivayisi. Ifilimu ye-Epitaxial ingakwazi ukulawula ngokunembile ukujiya kwayo kanye nezakhiwo ze-doping, lesi sici siholele ekuthuthukisweni okusheshayo kwamasekethe ahlanganisiwe we-semiconductor, abe yisiteji esiphelele kakhulu. Ikristalu eyodwa ye-silicon ngokusika, ukugaya, ukupholisha namanye amasu okucubungula, ukuze uthole ishidi eliphucuziwe, ungenza izingxenye ezihlukene kanye namasekethe ahlanganisiwe kulo. Kodwa ezikhathini eziningi leli shidi eliphucuziwe kuphela njengokusekelwa kwemishini kwe-substrate, lapho kudingekile ukukhulisa ungqimba lwefilimu eyodwa-crystal enohlobo olufanele lwe-conductivity kanye ne-resistiveivity, bese izingxenye ezihlukene noma ama-circuits ahlanganisiwe akhiqizwa ifilimu eyodwa-crystal. Le ndlela isetshenziswa, isibonelo, ekukhiqizeni i-silicon high-frequency high-power transistors, ukuxazulula ukungqubuzana phakathi kwe-voltage yokuwohloka nokumelana nochungechunge. Umqoqi we-transistor udinga i-voltage ephezulu yokuphuka, enqunywa ukumelana nokuhlangana kwe-pn ye-silicon wafer. Ukuze kuhlangatshezwane nalesi sidingo, izinto ezisetshenziswayo zokumelana neziphezulu ziyadingeka. Abantu abasesigabeni esinamandla sohlobo lwe-n-ukumelana okuphansi ku-epitaxial ambalwa kuya kwayishumi nambili ama-microns awugqinsi ane-doped high-resisance high-uhlobo lwe-n, ukukhiqizwa kwe-transistor kungqimba lwe-epitaxial, okuxazulula i-voltage ephezulu yokuphuka edingwa yi-resistivity ephezulu kanye nokumelana nochungechunge lomqoqi ophansi odingwa yi-substrate resistivity ephansi yokungqubuzana phakathi.
Ukukhula kwe-epitaxial kwesigaba segesi kuwuhlelo lokuqala lokusebenza emkhakheni we-semiconductor wobuchwepheshe obukhule kakhudlwana be-epitaxial, obudlala indima ebalulekile ekuthuthukisweni kwesayensi ye-semiconductor, okunomthelela omkhulu kwikhwalithi yezinto zokwakha kanye namadivayisi kanye nokwenza ngcono ukusebenza kwawo. Njengamanje, ukulungiswa kwefilimu ye-semiconductor eyodwa ye-crystal epitaxial iyindlela ebaluleke kakhulu yokubeka umhwamuko wamakhemikhali. Okubizwa ngokuthi i-chemical vapor deposition, okungukuthi, ukusetshenziswa kwezinto ezinegesi endaweni eqinile yokusabela kwamakhemikhali, inqubo yokukhiqiza amadiphozithi aqinile. Ubuchwepheshe be-CVD bungakhula amafilimu e-single-crystal asezingeni eliphezulu, ukuthola uhlobo lwe-doping oludingekayo kanye nokuqina kwe-epitaxial, ukuqaphela ukukhiqizwa okuningi, ngakho-ke kuye kwasetshenziswa kabanzi embonini. Embonini, i-epitaxial wafer elungiselelwe i-CVD ivamise ukuba nesendlalelo esisodwa noma eziningi ezingcwatshwe, ezingasetshenziswa ukulawula ukwakheka kwedivayisi nokusatshalaliswa kwe-doping ngokusabalalisa noma ukufakwa kwe-ion; izakhiwo ezibonakalayo ze-CVD epitaxial layer zihlukile kulezo ze-bulk material, futhi okuqukethwe kwe-oxygen ne-carbon ye-epitaxial layer ngokuvamile kuphansi kakhulu, okuyinzuzo yayo. Kodwa-ke, i-CVD epitaxial layer ilula ukwenza i-self-doping, ekusebenziseni okusebenzayo kudingeka ithathe izinyathelo ezithile zokunciphisa ungqimba lwe-epitaxial lwe-self-doping, ubuchwepheshe be-CVD busesezicini ezithile zombuso wenqubo ye-empirical, udinga ukwenza ucwaningo olujulile, ukuze luqhubeke nokuthola ukuthuthukiswa kobuchwepheshe be-CVD.
Indlela yokukhula ye-CVD iyinkimbinkimbi kakhulu, ekuphenduleni kwamakhemikhali ngokuvamile kuhlanganisa izinhlobonhlobo zezingxenye nezinto, ingakhiqiza inani lemikhiqizo ephakathi, futhi kunezinhlobonhlobo eziningi ezizimele, ezifana nezinga lokushisa, ingcindezi, izinga lokugeleza kwegesi, njll. Inqubo ye-epitaxial inezinyathelo eziningi ezilandelanayo, ezikhulisayo neziphelelisanayo. Ukuhlaziya inqubo kanye nendlela yokukhula kwe-epitaxial ye-CVD, okokuqala, ukucacisa ukuncibilika kwezinto ezisebenzayo esigabeni segesi, ukulinganisa ukucindezela okuyingxenye yamagesi ahlukahlukene, izinqubo ezicacile ze-kinetic kanye ne-thermodynamic; khona-ke ukuqonda amagesi asebenzayo kusukela esigabeni segesi kuya ebusweni bokuthutha okukhulu kwe-substrate, ukwakheka kongqimba lomngcele wokugeleza kwegesi kanye nobuso be-substrate, ukukhula kwe-nucleus, kanye nokusabela kwendawo, ukusabalalisa nokufuduka, futhi ngaleyo ndlela ekugcineni kukhiqize ifilimu oyifunayo. Enqubweni yokukhula ye-CVD, ukuthuthukiswa nokuqhubeka kwe-reactor kudlala indima ebalulekile, enquma kakhulu ikhwalithi ye-epitaxial layer. I-morphology ye-surface layer ye-epitaxial layer, ukukhubazeka kwe-lattice, ukusatshalaliswa nokulawulwa kokungcola, ukujiya nokufana kwesendlalelo se-epitaxial kuthinta ngokuqondile ukusebenza kwedivayisi kanye nesivuno.
-Le ndatshana ikhishwe nguumenzi womshini we-vacuum coatingI-Guangdong Zhenhua
Isikhathi sokuthumela: May-04-2024