1. Ukuchema kwe-workpiece kuphansi
Ngenxa yokwengezwa kwedivayisi yokwandisa izinga le-ionization, ukuminyana kwamanje kokukhipha kuyanda, futhi i-voltage yokuchema iyancipha ibe ngu-0.5 ~ 1kV.
I-backsputtering ebangelwa ukuqhuma ngokweqile kwama-ion anamandla aphezulu kanye nomthelela wokulimala endaweni yokusebenza kuyancishiswa.
2. Ukwanda kwe-plasma density
Izinyathelo ezihlukahlukene zokukhuthaza ukushayisana kwe-ionization zengeziwe, futhi izinga le-ionization yensimbi likhuphuke lisuka ku-3% laya ngaphezu kwe-15%.Ubuningi be-chin ion kanye nama-athomu angenawo amandla aphezulu, i-nitrogen ions, ama-athomu asebenzayo anamandla amakhulu kanye namaqembu asebenzayo ekamelweni lokumboza ayanda, okwenza kube lula ukusabela ekwakheni ama-compounds.Ubuchwepheshe bokumboza be-ion obucwebezelayo obuhlukahlukene obuthuthukisiwe bukwazile ukuthola izendlalelo zefilimu eqinile ye-TN ngokufakwa kokusabela ku-plasma ephakeme, kodwa ngenxa yokuthi zingezohlobo lokukhishwa okukhanyayo, ukuminyana kwamanje akukabi phezulu ngokwanele (namanje ileveli ye-mA/cm2 ), futhi ukuminyana kwe-plasma jikelele akuphezulu ngokwanele, futhi inqubo yokuphendula i-deposition compound coating inzima.
3. Uhla lokumboza lomthombo wokuhwamuka kwephuzu luncane
Ubuchwepheshe obuhlukahlukene bokuhlanganisa i-ion obuthuthukisiwe busebenzisa imithombo yokuhwamuka kwe-electron beam, kanye ne-gantu njengomthombo wokuhwamuka kwephuzu, okhawulelwe esikhawulweni esithile ngenhla kwe-gantu ukuze kufakwe ukusabela, ngakho ukukhiqiza kuphansi, inqubo inzima, futhi kunzima ukwenza izimboni.
4. Ukusebenza kwesibhamu se-electronic high-pressure
I-voltage yesibhamu se-electron ingu-6~30kV, kanti i-voltage yokuchema yesiqeshana sokusebenza ingu-0.5~3kV, okungeyokusebenza kwamandla kagesi aphezulu futhi enezingozi ezithile zokuphepha.
——Le ndatshana ikhishwe nguGuangdong Zhenhua Technology, aumenzi wemishini yokumboza optical.
Isikhathi sokuthumela: May-12-2023